Date: Wednesday, July 29th, 2015, 07:43
Category: Hardware, News
If you thought your NAND Flash-based solid state drive was fast, this will blow you away.
Intel and Micron announced 3D XPoint memory on Tuesday. The project looks into a joint endeavor into non-volatile memory technology the companies claim is the first major breakthrough in the space since the introduction of NAND flash in 1989.
3D XPoint is said to be up to 1,000 times faster than NAND with up to 1,000 times greater endurance, while packing in 10 times the density of conventional DRAM components.
The technology works as a stackable, transistor-less “three-dimensional checkerboard” architecture in which memory cells can be addressed individually as they sit at the intersection of word and bit lines. This design allows the system to write and read data in smaller batches, which in turn facilitates faster and more efficient operation. And with low latency overhead, a single 3D XPoint module can serve both system and storage needs.
Any number of computing applications can benefit from such fast and efficient technology. For example, 3D XPoint could accelerate machine learning systems, or enable medical researchers to study genetics and track diseases in realtime, the companies said.
Intel and Micron plan to release sample units to select hardware manufacturers later this year and plan to roll out independent product lines through 2016.
Stay tuned for additional details as they become available.